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512kx36 & 1mx18 flow-through n t ram tm - 1 - rev 3.0 february 2001 K7M161825M k7m163625m document title 512kx36 & 1mx18-bit flow through n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. revision history rev. no. 0.0 0.1 0.2 0.3 0.4 1.0 2.0 3.0 remark preliminary preliminary preliminary preliminary preliminary final final final history 1. initial document. 1. update icc & isb values. 1. change toe from 3.5ns to 4.0ns at -8 . 2. change toe from 3.5ns to 4.0ns at -9 . 3. change toe from 3.5ns to 4.0ns at -10 . 1. change i sb value from 60ma to 80ma at -8. 2. change i sb value from 50ma to 70ma at -9 . 3. change i sb value from 40ma to 60ma at -10 . 1. changed tcyc from 12ns to 10ns at -9 . 2. changed dc condition at icc and parameters icc ; from 300ma to 320ma at -8, from 260ma to 300ma at -9, from 240ma to 280ma at -10 3. change pin allocation at 119bga . - a4 ; from nc to a . - b2 ; from a to cs2 - b4 ; from cke to adv - b6 ; from a to cs2 - g4 ; from adv to a - h4 ; from nc to we - m4 ; from we to cke 1. final spec release. add access time 7.5ns bin. 1. remove -10 bin ( tcd=10ns) draft date march. 25. 1999 may. 27. 1999 june. 22. 1999 sep. 04. 1999 nov. 19. 1999 dec. 08. 1999 nov. 23. 2000 feb. 23. 2001
512kx36 & 1mx18 flow-through n t ram tm - 2 - rev 3.0 february 2001 K7M161825M k7m163625m 512kx36 & 1mx18-bit flow through n t ram tm the k7m163625m and K7M161825M are 18,874,368-bits syn- chronous static srams. the n t ram tm , or no turnaround random access memory uti- lizes all bandwidth in any combination of operating cycles. address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. burst order control must be tied "high or low". asynchronous inputs include the sleep mode enable(zz). output enable controls the outputs at any given time. write cycles are internally self-timed and initiated by the rising edge of the clock input. this feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals. for read cycles, flow-through sram allows output data to simply flow freely from the memory array. the k7m163625m and K7M161825M are implemented with samsung s high performance cmos technology and is avail- able in 100pin tqfp and 119bga packages. multiple power and ground pins minimize ground bounce. general description features logic block diagram ? 3.3v+0.165v/-0.165v power supply. ? i/o supply voltage 3.3v+0.165v/-0.165v for 3.3v i/o or 2.5v+0.4v/-0.125v for 2.5v i/o ? byte writable function. ? enable clock and suspend operation. ? single read/write control pin. ? self-timed write cycle. ? three chip enable for simple depth expansion with no data contention . ? a interleaved burst or a linear burst mode. ? asynchronous output enable control. ? power down mode. ? ttl-level three-state outputs. ? 100-tqfp-1420a /119bga(7x17 ball grid array package). fast access times parameter symbol -75 -85 -90 unit cycle time t cyc 8.5 10 10 ns clock access time t cd 7.5 8.5 9.0 ns output enable access time t oe 4.0 4.0 4.0 ns n t ram tm and no turnaround random access memory are trademarks of samsung. we bw x clk cke cs 1 cs 2 cs 2 adv oe zz dqa 0 ~ dqd 7 or dqa 0 ~ dqb 8 address address register c o n t r o l l o g i c a 0 ~a 1 36 or 18 dqpa ~ dqpd buffer data-in register k register burst address counter write control logic c o n t r o l r e g i s t e r k a [0:18]or a [0:19] lbo a 2 ~a 18 or a 2 ~a 19 a 0 ~a 1 (x=a,b,c,d or a,b) 512kx36 , 1mx18 memory array
512kx36 & 1mx18 flow-through n t ram tm - 3 - rev 3.0 february 2001 K7M161825M k7m163625m pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) dqpc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 vss v dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 b w d b w c b w b b w a c s 2 v d d v s s c l k w e c k e o e a d v a 1 8 a 1 7 a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 6 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 1 0 n . c . n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o pin name notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 18 adv we clk cke cs 1 cs 2 cs 2 bw x(x=a,b,c,d) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37,44 45,46,47,48,49,50,81 82,83,84,99,100 85 88 89 87 98 97 92 93,94,95,96 86 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,16,41,65,91 14,17,40,66,67,90 38,39,42,43 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 k7m163625m(512kx36) v ss
512kx36 & 1mx18 flow-through n t ram tm - 4 - rev 3.0 february 2001 K7M161825M k7m163625m pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) n.c. n.c. n.c. v ddq v ssq n.c. n.c. dqb 8 dqb 7 v ssq v ddq dqb 6 dqb 5 v ss v dd v dd v ss dqb 4 dqb 3 v ddq v ssq dqb 2 dqb 1 dqb 0 n.c. v ssq v ddq n.c. n.c. n.c. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 a 10 n.c. n.c. v ddq v ssq n.c. dqa 0 dqa 1 dqa 2 v ssq v ddq dqa 3 dqa 4 v ss v ss v dd zz dqa 5 dqa 6 v ddq v ssq dqa 7 dqa 8 n.c. n.c. v ssq v ddq n.c. n.c. n.c. 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 b w b b w a c s 2 v d d v s s c l k w e c k e o e a d v a 1 9 a 1 8 a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 7 a 1 6 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 n . c . n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o K7M161825M(1mx18) n . c . n . c . pin name notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 19 adv we clk cke cs 1 cs 2 cs 2 bw x(x=a,b) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37,44 45,46,47,48,49,50,80 81,82,83,84,99,100 85 88 89 87 98 97 92 93,94 86 64 31 v dd v ss n.c. dqa 0 ~a 8 dqb 0 ~b 8 v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,16,41,65,91 14,17,40,66,67,90 1,2,3,6,7,25,28,29,30, 38,39,42,43,51,52,53, 56,57,75,78,79,95,96 58,59,62,63,68,69,72,73,74 8,9,12,13,18,19,22,23,24 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76
512kx36 & 1mx18 flow-through n t ram tm - 5 - rev 3.0 february 2001 K7M161825M k7m163625m 119bga package pin configurations (top view) k7m163625m(512kx36) note : * a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 1 2 3 4 5 6 7 a v ddq a a a a a v ddq b nc cs 2 a adv a cs 2 nc c nc a a v dd a a nc d dqc dqpc v ss nc v ss dqpb dqb e dqc dqc v ss cs 1 v ss dqb dqb f v ddq dqc v ss oe v ss dqb v ddq g dqc dqc bw c a bw b dqb dqb h dqc dqc v ss we v ss dqb dqb j v ddq v dd nc v dd nc v dd v ddq k dqd dqd v ss clk v ss dqa dqa l dqd dqd bw d nc bw a dqa dqa m v ddq dqd v ss cke v ss dqa v ddq n dqd dqd v ss a 1 * v ss dqa dqa p dqd dqpd v ss a 0 * v ss dqpa dqa r nc a lbo v dd nc a nc t nc nc a a a nc zz u v ddq nc nc nc nc nc v ddq pin name symbol pin name symbol pin name a a 0 ,a 1 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b,c,d) oe zz lbo address inputs burst address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control v dd v ss n.c. dqa dqb dqc dqd dqpa~pd v ddq power supply ground no connect data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs output power supply
512kx36 & 1mx18 flow-through n t ram tm - 6 - rev 3.0 february 2001 K7M161825M k7m163625m 119bga package pin configurations (top view) 119bga package pin configurations (top view) K7M161825M(1mx18) note : * a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 1 2 3 4 5 6 7 a v ddq a a a a a v ddq b nc cs 2 a adv a cs 2 nc c nc a a v dd a a nc d dqb nc v ss nc v ss dqpa nc e nc dqb v ss cs 1 v ss nc dqa f v ddq nc v ss oe v ss dqa v ddq g nc dqb bw b a v ss nc dqa h dqb nc v ss we v ss dqa nc j v ddq v dd nc v dd nc v dd v ddq k nc dqb v ss clk v ss nc dqa l dqb nc v ss nc bw a dqa nc m v ddq dqb v ss cke v ss nc v ddq n dqb nc v ss a 1 * v ss dqa nc p nc dqpb v ss a 0 * v ss nc dqa r nc a lbo v dd nc a nc t nc a a nc a a zz u v ddq nc nc nc nc nc v ddq pin name symbol pin name symbol pin name a a 0 ,a 1 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b) oe zz lbo address inputs burst address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control v dd v ss n.c. dqa dqb dqpa, pb v ddq power supply ground no connect data inputs/outputs data inputs/outputs data inputs/outputs output power supply
512kx36 & 1mx18 flow-through n t ram tm - 7 - rev 3.0 february 2001 K7M161825M k7m163625m function description the k7m163625m and K7M161825M are n t ram tm designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, or vice versa. all inputs (with the exception of oe , lbo and zz) are synchronized to rising clock edges. all read, write and deselect cycles are initiated by the adv input. subsequent burst addresses can be internally generated by th e burst advance pin (adv). adv should be driven to low once the device has been deselected in order to load a new address for next operation. clock enable( cke ) pin allows the operation of the chip to be suspended as long as necessary. when cke is high, all synchronous inputs are ignored and the internal device registers will hold their previous values. n t ram tm latches external address and initiates a cycle, when cke , adv are driven to low and all three chip enables( cs 1 , cs 2 , cs 2 ) are active . output enable( oe ) can be used to disable the output at any given time. read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the address register, cke is driven low, all three chip enables( cs 1 , cs 2 , cs 2 ) are active, the write enable input signals we are driven high, and adv driven low. data appears at the outputs within the same clock cycle as the address for the data. also during read operation oe must be driven low for the device to drive out the requested data. write operation occurs when we is driven low at the rising edge of the clock. bw [d:a] can be used for byte write operation. the flow through n t ram tm uses a late write cycle to utilize 100% of the bandwidth. at the first rising edge of the clock, we and address are registered, and the data associated with that address is required one cycle later. subsequent addresses are generated by adv high for the burst access as shown below. the starting point of the burst seguence is provided by the external address. the burst address counter wraps around to its initial state upon completion. the burst sequence is determined by the state of the lbo pin. when this pin is low, linear burst sequence is selected. and when this pin is high, interleaved burst sequence is selected. during normal operation, zz must be driven low. when zz is driven high, the sram will enter a power sleep mode after 2 cycles. a t this time, internal state of the sram is preserved. when zz returns to low, the sram normally operates after 2 cycles of wake up time. burst sequence table (interleaved burst, lbo =high) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst, lbo =low) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0
512kx36 & 1mx18 flow-through n t ram tm - 8 - rev 3.0 february 2001 K7M161825M k7m163625m state diagram for n t ram tm begin write burst write begin read write d s r e a d burst read d s w r i t e d s read d s r e a d d s w r i t e b u r s t deselect b u r s t r e a d b u r s t w r i t e read write burst burst notes : 1. an ignore clock edge cycle is not shown is the above diagram. this is because cke high only blocks the clock(clk) input and d oes not change the state of the device. 2. states change on the rising edge of the clock(clk) command action ds deselect read begin read write begin write burst begin read begin write continue deselect
512kx36 & 1mx18 flow-through n t ram tm - 9 - rev 3.0 february 2001 K7M161825M k7m163625m synchronous truth table notes : 1. x means "don t care". 2. the rising edge of clock is symbolized by ( - ). 3. a continue deselect cycle can only be enterd if a deselect cycle is executed first. 4. write = l means write operation in write truth table. write = h means read operation in write truth table. 5. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adv we bw x oe cke clk address accessed operation h x x l x x x l - n/a not selected x l x l x x x l - n/a not selected x x h l x x x l - n/a not selected x x x h x x x l - n/a not selected continue l h l l h x l l - external address begin burst read cycle x x x h x x l l - next address continue burst read cycle l h l l h x h l - external address nop/dummy read x x x h x x h l - next address dummy read l h l l l l x l - external address begin burst write cycle x x x h x l x l - next address continue burst write cycle l h l l l h x l - n/a nop/write abort x x x h x h x l - next address write abort x x x x x x x h - current address ignore clock write truth table ( x36) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). we bw a bw b bw c bw d operation h x x x x read l l h h h write byte a l h l h h write byte b l h h l h write byte c l h h h l write byte d l l l l l write all bytes l h h h h write abort/nop truth tables write truth table (x18) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). we bw a bw b operation h x x read l l h write byte a l h l write byte b l l l write all bytes l h h write abort/nop
512kx36 & 1mx18 flow-through n t ram tm - 10 - rev 3.0 february 2001 K7M161825M k7m163625m asynchronous truth table operation zz oe i/o status sleep mode h x high-z read l l dq l h high-z write l x din, high-z deselected l x high-z notes 1. x means "don t care". 2. sleep mode means power sleep mode of which stand-by current does not depend on cycle time. 3. deselected means power sleep mode of which stand-by current depends on cycle time. absolute maximum ratings* *notes : stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on any other pin relative to v ss v in -0.3 to 4.6 v power dissipation p d 1.6 w storage temperature t stg -65 to 150 c operating temperature t opr 0 to 70 c storage temperature range under bias t bias -10 to 85 c capacitance* (t a =25 c, f=1mhz) *note : sampled not 100% tested. parameter symbol test condition min max unit input capacitance c in v in =0v - 7 pf output capacitance c out v out =0v - 9 pf operating conditions at 3.3v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 3.135 3.3 3.465 v ground v ss 0 0 0 v operating conditions at 2.5v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 2.375 2.5 2.9 v ground v ss 0 0 0 v
512kx36 & 1mx18 flow-through n t ram tm - 11 - rev 3.0 february 2001 K7M161825M k7m163625m dc electrical characteristics (v dd =3.3v+0.165v/-0.165v , t a =0 c to +70 c) notes : 1. reference ac operating conditions and characteristics for input and timing. 2. data states are all zero. 3. in case of i/o pins, the max. v ih =v ddq +0.3v. parameter symbol test conditions min max unit notes input leakage current(except zz) i il v dd =max ; v in =v ss to v dd -2 +2 m a output leakage current i ol output disabled, -2 +2 m a operating current i cc device selected, i out =0ma, zz v il , cycle time 3 t cyc min -75 - 340 ma 1,2 -85 - 320 -90 - 300 standby current i sb device deselected, i out =0ma, zz v il , f=max, all inputs 0.2v or 3 v dd -0.2v -75 - 90 ma -85 - 80 -90 - 70 i sb1 device deselected, i out =0ma, zz 0.2v, f=0, all inputs=fixed (v dd -0.2v or 0.2v) - 30 ma i sb2 device deselected, i out =0ma, zz 3 v dd -0.2v, f=max, all inputs v il or 3 v ih - 30 ma output low voltage(3.3v i/o) v ol i ol =8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh =-4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol =1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh =-1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.3* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.5** v 3 input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.5** v 3 v ss v ih v ss- 1.0v 20% t cyc (min) (v dd =3.3v+0.165v/-0.165v , v ddq =3.3v+0.165/-0.165v or v dd =3.3v+0.165v/-0.165v , v ddq =2.5v+0.4v/-0.125v, t a =0to70 c) test conditions parameter value input pulse level(for 3.3v i/o) 0 to 3.0v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 20% to 80% for 3.3v i/o) 1.0v/ns input rise and fall time(measured at 20% to 80% for 2.5v i/o) 1.0v/ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1
512kx36 & 1mx18 flow-through n t ram tm - 12 - rev 3.0 february 2001 K7M161825M k7m163625m ac timing characteristics (v dd =3.3v+0.165v/-0.165v , t a =0 c to +70 c) notes : 1. all address inputs must meet the specified setup and hold times for all rising clock(clk) edges when adv is sampled low and cs is sampled low. all other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 2. chip selects must be valid at each rising edge of clk(when adv is low) to remain enabled. 3. a write cycle is defined by we low having been registerd into the device at adv low, a read cycle is defined by we high with adv low, both cases must meet setup and hold times. 4. to avoid bus contention, at a given vlotage and temperature t lzc is more than t hzc. the soecs as shown do not imply bus contention because t lzc is a min. parameter that is worst case at totally different test conditions (0 c,3.465v) than t hzc , which is a max. parameter(worst case at 70 c,3.135v) it is not possible for two srams on the same board to be at such different voltage and temperatue. parameter symbol -75 -85 -90 unit min max min max min max cycle time t cyc 8.5 - 10 - 10 - ns clock access time t cd - 7.5 - 8.5 - 9.0 ns output enable to data valid t oe - 4.0 - 4.0 - 4.0 ns clock high to output low-z t lzc 2.5 - 2.5 - 2.5 - ns output hold from clock high t oh 2.5 - 2.5 - 2.5 - ns output enable low to output low-z t lzoe 0 - 0 - 0 - ns output enable high to output high-z t hzoe - 4.0 - 4.0 - 4.0 ns clock high to output high-z t hzc - 5.0 - 5.0 - 5.0 ns clock high pulse width t ch 2.5 - 3.0 - 3.0 - ns clock low pulse width t cl 2.5 - 3.0 - 3.0 - ns address setup to clock high t as 2.0 - 2.0 - 2.0 - ns cke setup to clock high t ces 2.0 - 2.0 - 2.0 - ns data setup to clock high t ds 2.0 - 2.0 - 2.0 - ns write setup to clock high ( we , bw x ) t ws 2.0 - 2.0 - 2.0 - ns address advance setup to clock high t advs 2.0 - 2.0 - 2.0 - ns chip select setup to clock high t css 2.0 - 2.0 - 2.0 - ns address hold from clock high t ah 0.5 - 0.5 - 0.5 - ns cke hold from clock high t ceh 0.5 - 0.5 - 0.5 - ns data hold from clock high t dh 0.5 - 0.5 - 0.5 - ns write hold from clock high ( we , bw x ) t wh 0.5 - 0.5 - 0.5 - ns address advance hold from clock high t advh 0.5 - 0.5 - 0.5 - ns chip select hold from clock high t csh 0.5 - 0.5 - 0.5 - ns zz high to power down t pds 2 - 2 - 2 - cycle zz low to power up t pus 2 - 2 - 2 - cycle output load(b), (for t lzc , t lzoe , t hzoe & t hzc ) dout 353 w / 1538 w 5pf* +3.3v for 3.3v i/o 319 w / 1667 w fig. 1 * including scope and jig capacitance output load(a) dout zo=50 w rl=50 w vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o 30pf*
512kx36 & 1mx18 flow-through n t ram tm - 13 - rev 3.0 february 2001 K7M161825M k7m163625m sleep mode sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to i sb2 . the duration of sleep mode is dictated by the length of time the zz is in a high state. after entering sleep mode, all inputs except zz become disabled and all outputs go to high-z the zz pin is an asynchronous, active high input that causes the device to enter sleep mode. when the zz pin becomes a logic high, i sb2 is guaranteed after the time t zzi is met. any operation pending when entering sleep mode is not guaranteed to successful complete. therefore, sleep mode (read or write) must not be initiated until valid pend- ing operations are completed. similarly, when exiting sleep mode during t pus , only a deselect or read cycle should be given while the sram is transitioning out of sleep mode. sleep mode electrical characteristics description conditions symbol min max units current during sleep mode zz 3 v ih i sb2 10 ma zz active to input ignored t pds 2 cycle zz inactive to input sampled t pus 2 cycle zz active to sleep current t zzi 2 cycle zz inactive to exit sleep current t rzzi 0 k t pds zz setup cycle t rzzi zz isupply all inputs (except zz) outputs (q) t zzi t pus zz recovery cycle deselect or read only high-z don t care i sb2 sleep mode waveform normal operation cycle deselect or read only
512kx36 & 1mx18 flow-through n t ram tm - 14 - rev 3.0 february 2001 K7M161825M k7m163625m c l o c k c k e a d d r e s s w r i t e c s a d v o e d a t a o u t t i m i n g w a v e f o r m o f r e a d c y c l e n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c h t c l t c e s t c e h t a s t a h a 1 a 2 a 3 t w s t w h t c s s t c s h t o e t h z o e t l z o e t c d t o h t h z c q 3 - 4 q 3 - 3 q 3 - 2 q 3 - 1 q 2 - 4 q 2 - 3 q 2 - 2 q 2 - 1 q 1 - 1 d o n t c a r e u n d e f i n e d t c y c t a d v s t a d v h
512kx36 & 1mx18 flow-through n t ram tm - 15 - rev 3.0 february 2001 K7M161825M k7m163625m t i m i n g w a v e f o r m o f w r t e c y c l e c l o c k a d d r e s s w r i t e c s a d v d a t a i n t c h t c l a 2 a 3 d 2 - 1 d 1 - 1 d 2 - 2 d 2 - 3 d 2 - 4 d 3 - 1 d 3 - 2 d 3 - 3 o e d a t a o u t t d s t d h t h z o e d o n t c a r e u n d e f i n e d t c y c c k e a 1 t c e s t c e h n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l q 0 - 4 d 3 - 4
512kx36 & 1mx18 flow-through n t ram tm - 16 - rev 3.0 february 2001 K7M161825M k7m163625m t i m i n g w a v e f o r m o f s i n g l e r e a d / w r i t e c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l t d s t d h d a t a o u t a 2 a 4 a 5 d 2 t o e t l z o e q 1 d o n t c a r e u n d e f i n e d t c y c c k e t c e s t c e h a 1 a 3 a 7 a 6 q 3 q 4 q 6 d 5 n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l q 7
512kx36 & 1mx18 flow-through n t ram tm - 17 - rev 3.0 february 2001 K7M161825M k7m163625m t i m i n g w a v e f o r m o f c k e o p e r a t i o n c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l d a t a o u t a 1 a 2 a 3 a 4 a 5 t c e s t c e h d o n t c a r e u n d e f i n e d t c y c c k e t d s t d h d 2 q 3 q 4 q 1 n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c d t l z c t h z c
512kx36 & 1mx18 flow-through n t ram tm - 18 - rev 3.0 february 2001 K7M161825M k7m163625m t i m i n g w a v e f o r m o f c s o p e r a t i o n c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l d a t a o u t a 1 a 2 a 3 a 4 a 5 d o n t c a r e u n d e f i n e d t c y c c k e d 5 q 4 t c e s t c e h q 1 q 2 t o e t l z o e d 3 t c d t l z c n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t h z c t d h t d s
512kx36 & 1mx18 flow-through n t ram tm - 19 - rev 3.0 february 2001 K7M161825M k7m163625m package dimensions 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 units ; millimeters/inches
512kx36 & 1mx18 flow-through n t ram tm - 20 - rev 3.0 february 2001 K7M161825M k7m163625m 119bga package dimensions 0.750 0.15 1.27 1.27 12.50 0.10 0.60 0.10 0.60 0.10 1.50ref c1.00 c0.70 14.00 0.10 22.00 0.10 20.50 0.10 notes 1. all dimensions are in millimeters. 2. solder ball to pcb offset : 0.10 max. 3. pcb to cavity offset : 0.10 max. indicator of ball(1a) location

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